http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016507467-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2013-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016507467-A |
| titleOfInvention | Vanadium-doped single crystal and growth method thereof |
| abstract | A sublimation grown SiC single crystal includes a vanadium dopant that is included in the SiC single crystal structure by introducing gaseous vanadium into the growth environment of the SiC single crystal during the growth of the SiC single crystal. . [Selection] Figure 10A |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023157514-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017119603-A |
| priorityDate | 2013-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.