| abstract |
A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer comprising a first one or more material layers left in a first region of a substrate of the device wafer. Including groups. The method further includes forming a cap wafer configured to be attached to the device wafer, wherein the cap wafer is left in a second region of the second region of the cap wafer substrate. A group of material layers. Then, when the device wafer and the cap wafer are bonded, an integrated bonding gap adjusting structure is formed by a bonding layer of the first group of one or more material layers and the second group of one or more material layers. Is defined. |