| abstract |
An apparatus and method for processing a substrate according to a PECVD process is described. The temperature profile of the substrate is adjusted to change the deposition rate profile across the substrate. The plasma density profile is adjusted to change the deposition rate profile across the substrate. The chamber surface exposed to the plasma is heated to improve the uniformity of the plasma density and reduce the formation of poor quality deposits on the chamber surface. In-situ measurements can be used to monitor the progress of the deposition process and initiate control actions including substrate temperature profile, plasma density profile, pressure, temperature, and reactant flow. [Selection] Figure 4 |