| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-08 |
| filingDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bbed9308bf7a9b71f1e81a88dfd09c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_014148ec856340bf6f3cc97cd58edf74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c49807d9829061b794f7452efd9c196f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa49bef3c4db0a4deb3f18f2729c08e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_602a5fc5738819ab532d3659431364f8 |
| publicationDate |
2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016225502-A |
| titleOfInvention |
Substrate processing method and substrate processing apparatus |
| abstract |
Provided are a substrate processing method and a substrate processing apparatus capable of etching at a stable rate even with a metal film which is hardly soluble in acid. According to one embodiment, a substrate processing method includes etching a metal film provided on a substrate by contacting the metal film provided on the substrate with a first liquid containing an oxidizing agent, a complexing agent, and water (H 2 O). And after starting the etching, the first liquid containing water (H 2 O) in a first content ratio contains water (H 2 O) in a second content ratio larger than the first content ratio. A step of mixing a second liquid containing, a metal film provided on the substrate in a liquid in which the first liquid and the second liquid are mixed, or a metal provided on a substrate different from the substrate Etching the metal film by contacting the film. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854534-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515873-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11552000-B2 |
| priorityDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |