| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_863cffe3f4dcd9847443cb1dd42f367e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59b6089e20258b5d3155837027d3322f |
| publicationDate |
2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016225474-A |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor device |
| abstract |
A semiconductor device manufacturing method and a semiconductor device capable of stably burying metal or the like in a TSV are provided. A semiconductor device according to an embodiment includes a semiconductor substrate provided with a through-hole, a device layer including a lower layer wiring, an insulating layer covering the device layer, and an insulating layer. On the first insulating film 171/172 and the first insulating film 171/172 provided with an opening having a diameter substantially the same as or larger than the opening diameter of the through hole 180H of the semiconductor substrate 11. To the second insulating film 173 located on the inner surface of the through hole 180H of the semiconductor substrate 11 and the lower wiring 122 in the device layer 12 from the second insulating film 173 through the through hole 180H of the semiconductor substrate 11 electrically. You may provide the 2nd penetration electrode 18 to connect. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043419-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018170363-A |
| priorityDate |
2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |