http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016219796-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-3581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2016-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_decb21f7343584055449dec34924d9a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fff775746a79795dbfbaf830ae6987c |
| publicationDate | 2016-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016219796-A |
| titleOfInvention | Element, oscillator having the same, and information acquisition apparatus |
| abstract | A technique for designing a waveguide with an RTD capable of emitting an electromagnetic wave at a frequency in a range of 0.1 to 2 THz is provided. An element having an active layer capable of emitting electromagnetic waves includes a first and second conductor layers extending in a first direction and a semiconductor disposed between the first and second conductor layers. 110. The semiconductor includes a first semiconductor layer 103 in contact with the first conductor layer, a second semiconductor layer 104 in contact with the second conductor layer, and an active layer disposed between the first and second semiconductor layers. The layer 105 is included. With the stacking direction of the first semiconductor layer, the active layer, and the second semiconductor layer as the second direction, the semiconductor has a width in the direction intersecting the first and second directions of 0.5 μm or more and 5 μm or less. The thickness in the second direction is not less than 0.1 μm and not more than 1.0 μm. The active layer is a double-barrier resonant tunnel diode including two barrier layers, and each of the two barrier layers has a thickness in the second direction of 0.7 nm or more and 2.0 nm or less. [Selection] Figure 1 |
| priorityDate | 2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.