| abstract |
A photomask blank comprising a chemically amplified negative resist film for high energy beam exposure, wherein the resist film comprises (A) a repeating unit represented by the following general formula (1) and at least one fluorine atom: A photomask blank containing a polymer compound containing a repeating unit containing, (B) a base resin whose solubility in an alkaline developer is reduced by the action of an acid, (C) an acid generator, and (D) a basic compound. [Effect] (A) The resist film containing the polymer compound significantly improves the coating property of the antistatic film coated on the resist film, and can form a highly accurate resist pattern during pattern formation. [Selection figure] None |