abstract |
The present invention provides a Ga2O3-based semiconductor element excellent in heat dissipation characteristics and voltage resistance, a method for manufacturing the same, and a crystal laminated structure that can be used for manufacturing the semiconductor element. As one embodiment, a base substrate 11 made of a Ga2O3-based crystal having a thickness of 0.05 μm or more and less than 10 μm, and an epitaxial layer 12 made of a Ga2O3-based crystal and formed on the base substrate 11 are provided. A Schottky diode 10 is provided. [Selection] Figure 1 |