http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016197737-A

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filingDate 2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35db4e466c51b3b1f965ac90305a3df3
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publicationDate 2016-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2016197737-A
titleOfInvention SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND CRYSTAL LAMINATE STRUCTURE
abstract The present invention provides a Ga2O3-based semiconductor element excellent in heat dissipation characteristics and voltage resistance, a method for manufacturing the same, and a crystal laminated structure that can be used for manufacturing the semiconductor element. As one embodiment, a base substrate 11 made of a Ga2O3-based crystal having a thickness of 0.05 μm or more and less than 10 μm, and an epitaxial layer 12 made of a Ga2O3-based crystal and formed on the base substrate 11 are provided. A Schottky diode 10 is provided. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018123799-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563092-B2
priorityDate 2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 48.