| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-38 |
| filingDate |
2016-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c9f6d5dc56cabe1e6bf0123b8d4a86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a35530cd49f610054f035642723c8a80 |
| publicationDate |
2016-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016186127-A |
| titleOfInvention |
Pretreatment of nickel and cobalt liners for electrodeposition of copper into through-silicon vias |
| abstract |
Prior to electrodeposition 405 copper on a nickel-containing or cobalt-containing seed layer, the semiconductor wafer has a first concentration of at least about 10 g / L, more preferably at least about 30 g / L. A pretreatment is performed 403 by bringing the seed layer into contact with a prewetting liquid comprising dicopper ions and an electroplating inhibitor such as a compound from the polyalkylene glycol group. The pre-wet liquid is deaerated prior to contact with the wafer substrate. The pretreatment is performed under a pressure of less than atmospheric pressure to prevent foam formation within the recess features. After the wafer is pretreated, copper is electrodeposited 405 from an electroplating solution (such as an acidic electroplating solution) to fill the recess features on the wafer. [Effect] Corrosion of the seed layer during electroplating is minimized, and plating defects are reduced. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11371155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018104799-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220047151-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220130202-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102484547-B1 |
| priorityDate |
2015-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |