http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016184749-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C15-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-263 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C15-04 |
| filingDate | 2016-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21731d6bea02a63b266dc94c057bc450 |
| publicationDate | 2016-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016184749-A |
| titleOfInvention | Manufacturing method of semiconductor memory device |
| abstract | An object is to provide a semiconductor memory device capable of reducing power consumption of a memory cell when a CAM having a nonvolatile memory device is provided. Another object is to provide a semiconductor memory device that can eliminate deterioration when data is repeatedly written. In addition, a nonvolatile memory device capable of increasing the density of memory cells is provided. A memory circuit including a first transistor including an oxide semiconductor in a semiconductor layer, a capacitor capable of holding a potential corresponding to written data by turning off the first transistor, and the written potential A semiconductor memory device having a reference circuit for referring to the memory, and detecting a conduction state of a second transistor constituting the reference circuit to obtain a matching data address and enabling a high-speed search function is there. [Selection] Figure 1 |
| priorityDate | 2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.