| abstract |
There is provided a polishing liquid for CMP capable of obtaining a higher polishing rate and dispersion stability while suppressing generation of polishing flaws and dishing. A polishing slurry for CMP having a pH of 7 or less, comprising an abrasive, an additive having a functional group having a pKa in the range of 4 to 9, a specific nonionic amphiphilic surfactant, and water. The abrasive particles have a core-shell structure composed of a core layer 1 and a shell layer 3, and the core layer 1 is made of aluminum, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper. At least one element selected from zinc, gallium, germanium, zirconium, indium, tin, yttrium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, tungsten, bismuth, thorium and alkaline earth metals Polishing for CMP containing oxide and shell layer 3 containing cerium oxide . [Selection] Figure 1 |