http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016175806-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8eae2d32a1c1bfd0101da116d812a535 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-037 |
| filingDate | 2015-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_754fcc2334378d5b3b73f34d24912ab5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22e1440075c4b833c4d0d70a87f700af |
| publicationDate | 2016-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016175806-A |
| titleOfInvention | Manufacturing method of high purity silicon |
| abstract | In a method for producing high-purity Si using crude Si, impurities in product Si, in particular, B, P, Al, Fe, etc., are reduced inexpensively and easily to the level required for Si for solar cell substrates. A method for producing high-purity silicon is provided. An Al-Si molten metal having a Si content of 15 to 50% by mass is prepared, and a hollow rotating cooling body is immersed in the molten Al-Si while adjusting the molten metal temperature to a range of 680 to 1100 ° C. And rotating the rotating cooling body while feeding a cooling fluid into the rotating cooling body, and depositing a Si refined mass having a reduced concentration of at least B and P among impurities on the outer peripheral surface of the rotating cooling body. This is achieved by a method for producing high-purity silicon, comprising the step of performing the operation of at least once. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111747415-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111747415-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109354024-A |
| priorityDate | 2015-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.