http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016170417-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac |
| publicationDate | 2016-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016170417-A |
| titleOfInvention | Semiconductor device |
| abstract | It is an object of the present invention to propose a method for manufacturing a display device having a thin film transistor with high electrical characteristics and high reliability with high mass production. In a display device including an inverted staggered thin film transistor having a channel etch structure, the inverted staggered thin film transistor includes a gate insulating film formed over a gate electrode and a microcrystalline semiconductor film functioning as a channel formation region over the gate insulating film. (Also referred to as a semi-amorphous semiconductor film) is formed, a buffer layer is formed over the microcrystalline semiconductor film, a pair of source and drain regions are formed over the buffer layer, and a pair of sources in contact with the source and drain regions An electrode and a drain electrode are formed. In the above, the microcrystalline semiconductor film is formed over the gate insulating film on which hydrogen plasma is applied. [Selection] Figure 1 |
| priorityDate | 2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.