Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2029-0411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F11-1048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3459 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02 |
filingDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afbf93c0c5397bc69e19a8180f59d0ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ca3db639e9c9e83c0edf5a94d70d531 |
publicationDate |
2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2016162466-A |
titleOfInvention |
Semiconductor memory device and memory system |
abstract |
A semiconductor memory device and a memory system capable of improving the reliability of a read operation are provided. In the semiconductor memory device according to the embodiment, the first to third memory cell transistors MT commonly connected to the first word line WL are connected to the first word line WL via the first to third bit lines BL, respectively. Connected to the first to third sense amplifier units SAU. The first and second sense amplifier units SAU connected to the adjacent first and second memory cell transistors MT are connected in common to the first signal line IO, and input / output data in different cycles, The third sense amplifier unit SAU is connected to the second signal line IO, and inputs / outputs data in the same cycle as the first sense amplifier unit. [Selection] Figure 10 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022249528-A1 |
priorityDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |