http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016160164-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 |
| filingDate | 2015-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b019f2322f83f1b4dea2c69279c05083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02745f5c49071fb6e51a8169b59b7efb |
| publicationDate | 2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016160164-A |
| titleOfInvention | Crystal growth method |
| abstract | A semiconductor having a larger thermal expansion coefficient than that of a substrate can be grown with higher crystallinity. In step S101, a semiconductor substrate placed on a substrate table in a film formation chamber is heated (heating step). In step S102, the interval between the substrate and the source gas discharge unit is controlled (interval control step). In this control, as the difference in thermal expansion coefficient between the substrate and the semiconductor layer is larger, the distance between the substrate and the discharge unit is controlled to be smaller. Next, in step S103, the source gas discharged from the discharge unit is supplied onto the heated substrate to grow a semiconductor layer on the substrate (crystal growth step). [Selection] Figure 1 |
| priorityDate | 2015-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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