http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016157978-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec4a5f3b5b74f7867c60d9dc292aa58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f804000d767e858ac40266681d29806b |
| publicationDate | 2016-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016157978-A |
| titleOfInvention | Semiconductor device |
| abstract | Provided is a transistor using an oxide semiconductor film which has excellent on-state characteristics by reducing contact resistance between an oxide semiconductor film and a metal film. A pair of electrodes over an insulating surface, an oxide semiconductor film provided in contact with the pair of electrodes, a gate insulating film over the oxide semiconductor film, and the oxide semiconductor film overlap with each other with the gate insulating film interposed therebetween A semiconductor device including a halogen element in a region in contact with the oxide semiconductor film in the pair of electrodes. Further, as a method for including a halogen element in a region in contact with the oxide semiconductor film in the pair of electrodes, plasma treatment in an atmosphere containing fluorine can be used. [Selection] Figure 1 |
| priorityDate | 2016-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 94.