| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-0828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af43054d8f53ba8410bc6bbedf6161ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46a64a4e60c3cd0bfed085121e5b6699
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b4747af8918b0c5429d99362410ef4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bb8ac4698685704bcdb14ca3750eb93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_432e172fd7f7906a8a3dd8f5be9be055 |
| publicationDate |
2016-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016146470-A |
| titleOfInvention |
Semiconductor device with overload current carrying capability |
| abstract |
A semiconductor device having an overload current carrying capability is provided. A semiconductor device (1) is an RC-IGBT including a transistor cell (1-1) and a diode cell (1-2) in an n-type semiconductor region (11). The p-type semiconductor channel region 111 included in the transistor cell has a first doping concentration, and the transition between the semiconductor channel region and the semiconductor region forms a first pn junction 11-1. The p-type semiconductor auxiliary region 112 has a second doping concentration, which is at least 30% higher than the first doping concentration and is a transition between the semiconductor auxiliary region and the semiconductor region. Forms a second pn junction 11-2 and is positioned at the same depth or deeper in the semiconductor region than the first pn junction. The diode cell includes a p-type semiconductor anode region 113 having a third doping concentration, where the third doping concentration is less than the second doping concentration. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018052099-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629685-B2 |
| priorityDate |
2014-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |