http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016138325-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9cb217f83556ce2a418344c2d485415 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcefe1bb4a1c71461d704d1691e43483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33e089881ea9874599e16fe6c4fd9656 |
| publicationDate | 2016-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016138325-A |
| titleOfInvention | Method for producing metal or semi-metal carbonitride film |
| abstract | A low-temperature manufacturing method for a metal or metalloid carbonitride film having high chemical resistance is provided. In a CVD method or an ALD method using a 1,2,4-triazole compound 2 represented by the formula (1) or a solvent solution thereof and a metal source or a metalloid source, the inside of a reaction chamber 11 is given a predetermined With the temperature and pressure set, the compound 2 was vaporized directly or its solvent solution, and an inert gas and a metal source or metalloid source 7 were supplied simultaneously or alternately into the reaction chamber 11 and heated. A method of forming a metal or semi-metal carbonitride film on the film formation target 15. (R is each independently H, a C1-5 alkyl group or a C1-5 trialkylsilyl group). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019150697-A1 |
| priorityDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 154.