| abstract |
A resist underlayer film forming composition is provided. The following formula (0): (wherein R is an alkyl group, a silyl group, a haloalkyl group, or a phenyl group or a naphthyl group optionally substituted with at least one of an alkyl group, a haloalkyl group and a halogeno group) X represents an alkyl group optionally substituted by a halogeno group, vinyl group, allyl group, hydroxy group, carboxyl group, amino group, alkylthio group, cyano group, acetyl group, acetyloxy group, alkoxy group A carbonyl group, a nitro group, a nitroso group, an amide group, an imide group, an alkoxysulfonyl group, a sulfonamide group, or a phenyl group, a naphthyl group, which may be substituted with at least one of an alkyl group, a haloalkyl group and a halogeno group, Anthryl group or pyrenyl group, and p represents 2 or 3.) The resist underlayer film forming composition, which comprises. [Selection figure] None |