Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c85d78c6a4459b5dbbc49c82a4c5c107 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
filingDate |
2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9eaa2fde8b2f473df721c8a59b624dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_726e455a3b119aa0747ae886221e18c6 |
publicationDate |
2016-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2016126333-A |
titleOfInvention |
Photolithographic method |
abstract |
A photolithographic method capable of forming a fine pattern is provided. A photoresist composition comprising (a) providing a semiconductor substrate including an organic layer to be etched; (b) a resin including an acid-cleavable leaving group, a photoacid generator, and a solvent. Applying the layer directly on the organic layer; (c) exposing the photoresist layer to activating radiation through a patterned photomask; (d) heating the photoresist layer; e) developing the exposed photoresist composition layer with an organic solvent developer to form a negative resist pattern comprising acid groups and / or alcohol groups; and (f) comprising a silicon-containing polymer and a solvent, Applying a silicon-containing composition that does not contain a crosslinking agent on the resist pattern; (g) rinsing the residual silicon-containing composition from the substrate; and (h) selectively etching the organic layer. Photolithographic methods including. [Selection] Figure 1A |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017115601-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017115601-A1 |
priorityDate |
2014-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |