| abstract |
Provided are a power storage device that can improve performance such as an increase in discharge capacity and is less prone to deterioration due to peeling of an active material layer, and a manufacturing method thereof. A current collector, a mixed layer formed on the current collector, and a crystalline silicon layer functioning as an active material layer formed on the mixed layer, the crystalline silicon layer having a crystal structure And a whisker-like crystalline silicon region having a plurality of protrusions protruding on the crystalline silicon region. The whisker-like crystalline silicon region has a protrusion having a bent or branched portion. [Selection] Figure 1 |