http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016119490-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K20-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2016-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a74b42d7267cff298277cbe111692679 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_424f2282d0cf662d4fa0f1a694054cd3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac |
| publicationDate | 2016-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016119490-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object is to provide a method for manufacturing an SOI substrate in which crystal defects in a single crystal semiconductor layer are reduced even when a single crystal semiconductor substrate having crystal defects is used. A first oxide film is formed on a single crystal semiconductor substrate, the first oxide film is removed, and the surface of the single crystal semiconductor substrate from which the first oxide film is removed is irradiated with laser light. Forming a second oxide film on the single crystal semiconductor substrate and irradiating the single crystal semiconductor substrate with ions through the second oxide film, thereby forming an embrittled region in the single crystal semiconductor substrate; The oxide film and the semiconductor substrate are bonded so as to face each other, and heat treatment is performed, so that the single crystal semiconductor substrate is divided in the embrittled region, and a semiconductor substrate to which the single crystal semiconductor layer is bonded is obtained. [Selection] Figure 1 |
| priorityDate | 2008-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 84.