http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016103646-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bcaca7c88987cfc3bd4b306a82f0cbc |
| publicationDate | 2016-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016103646-A |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | The reliability of a HEMT formed of a GaN-based material is improved. SOLUTION: Semiconductor layers 21 to 24 made of a nitride semiconductor formed above a substrate 10, an electrode 41 formed of a material containing gold above the semiconductor layers 21 to 24, and above the electrode 41 The formed barrier film 61 and the protective film 50 formed of a material containing any one of a silicon oxide film, a nitride film, and an oxynitride are provided above the semiconductor layers 21 to 24. The protective film 50 is formed on the barrier film 61, and the barrier film 61 is formed of a material containing any of metal oxide, nitride, and oxynitride, and the semiconductor layers 21 to 24 are A first semiconductor layer 21, a second semiconductor layer 23 formed above the first semiconductor layer 21, and a cap layer 24 formed of a material containing GaN above the second semiconductor layer 23; ,including. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020068292-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018073974-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018013-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784053-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388585-B2 |
| priorityDate | 2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.