| abstract |
A thin film transistor using an oxide semiconductor as a channel and having resistance to environmental factors or high reliability is provided. One thin film transistor of the present invention includes a gate electrode, an insulating film, a channel including an oxide semiconductor as a main component, a source electrode, and a drain electrode. In addition, the insulating film 60 includes a compound having one or more second elements 62 having a redox potential lower than the redox potential of the first element contained in the oxide semiconductor, and the insulating film 60. Touches the channel 40. [Selection] Figure 1 |