| abstract |
A polishing liquid capable of suppressing disorder of a crystal lattice and a method for polishing an SiC substrate using the polishing liquid are provided. A polishing liquid used for polishing a SiC substrate (11) containing a permanganate, a pH adjuster, and water. A method of polishing a SiC substrate, which supplies a polishing liquid and polishes the SiC substrate by bringing the polishing pad (18) into contact with the SiC substrate, comprising permanganate, inorganic salts having oxidizing power, and water. A first polishing step of polishing the SiC substrate using the first polishing liquid, and a second polishing containing a permanganate, a pH adjuster, and water after the first polishing step. And a second polishing step of finishing polishing the SiC substrate using the liquid. [Selection] Figure 1 |