| abstract |
An object of the present invention is to provide a method for industrially advantageously producing a conductive laminated structure or a crystalline oxide semiconductor film useful for a vertical semiconductor device. A crystalline oxide semiconductor film including a crystalline oxide semiconductor having a corundum structure as a main component is stacked over a substrate, and then a conductive adhesive and a conductive substrate are used, or a laser is used. Then, by removing the substrate from the crystalline oxide semiconductor film, a conductive laminated structure or a crystalline oxide semiconductor film comprising the crystalline oxide semiconductor film, the conductive adhesive, and the conductive substrate. Manufacturing. [Selection figure] None |