| abstract |
A highly reliable semiconductor device that is resistant to external stress and electrostatic discharge while achieving thinning and miniaturization, and a semiconductor device with high yield by preventing defects in shape and characteristics due to external stress or electrostatic discharge. A method of making is provided. The conductive shield 103 provided on the upper side or the lower side of the semiconductor integrated circuit 100 prevents electrostatic breakdown (malfunction of the circuit or damage of the semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit 100, and is sufficient. Ensure communication capability. In addition, the pair of insulators 104a, 104b, 105a, and 105b sandwiching the semiconductor integrated circuit 100 has resistance to external stress while achieving reduction in thickness and size. [Selection] Figure 1 |