| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate |
2014-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f13453593f8337bcee69eaa514c7714a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a8f1219a1e08baa8c6b80c159341b0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86976c2921565f5de08e0c070b55b167 |
| publicationDate |
2016-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016069660-A |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
| abstract |
An object of the present invention is to reduce the amount of reaction gas used, and thus to reduce the manufacturing cost of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment forms a film with a reactive gas flow rate as a first flow rate in a first state in which a surface of a semiconductor substrate to be formed has a first surface area. A change from the first state to a second state having a second surface area different from the first surface area on the surface of the semiconductor substrate to be deposited is detected, and the flow rate of the reaction gas is set as the first flow rate. The film is formed by switching to a different second flow rate. [Selection] Figure 1 |
| priorityDate |
2014-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |