http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016058512-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30852e6bdb59006771c3ffe7b222dd2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab5f34108f9d2eef817628ab20004968 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04984f45d814363d277576380011cb61 |
| publicationDate | 2016-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016058512-A |
| titleOfInvention | Epilayer-attached GaN film composite substrate and manufacturing method thereof |
| abstract | An epilayer-attached GaN film composite substrate including an AlxGa1-xN epilayer free from cracks as an epilayer and a method of manufacturing the same. An epilayer-attached GaN film composite substrate 2 includes a GaN film composite substrate 1 in which a support substrate 11 and a GaN film 13 are bonded together, and an InyGa1- disposed in order from the GaN film 13 side of the GaN film composite substrate 1. yN epilayer 22 (0 <y <1) and AlxGa1-xN epilayer 24 (0 <x <1), and the Al composition ratio x and thickness txμm of the AlxGa1-xN epilayer 24 are expressed by the formula (1 X × tx ≧ 0.028 is satisfied. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115802-B2 |
| priorityDate | 2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.