http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016053217-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1250408cc4b78ebc7bf07a2a42fd31f4 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 |
| filingDate | 2015-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9ea29368216ab64900d00edfca41d80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2abe809de43bcb56f2efecc07be2530f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce0ae2b93b0b8fb222df32fe3f9472e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b78c1f0f134743d62826c4e506b91c6c |
| publicationDate | 2016-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016053217-A |
| titleOfInvention | Chemical vapor deposition method and coated article |
| abstract | The present invention provides a chemical vapor deposition method for forming a coating for improving the corrosion resistance of a substrate surface. A substrate 101 is disposed in a chemical vapor deposition chamber 103, and a vapor deposition gas 113 containing organosilane, dimethylsilane, or silane is placed in the chemical vapor deposition chamber 103 at a temperature lower than the thermal decomposition temperature of the vapor deposition gas. Then, the chamber 103 is heated to the thermal decomposition temperature of the vapor deposition gas 113 or higher, and chemical vapor deposition is performed within a pressure range of 0.01 to 200 psia to form a corrosion-resistant film containing silicon. Chemical vapor deposition method. [Selection] Figure 1 |
| priorityDate | 2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.