| abstract |
A novel chemical mechanical polishing slurry composition is provided for use in polishing substrates having ruthenium and copper surface features. A substrate containing ruthenium and copper is prepared, and 0.1 to 25% by weight of abrasive grains, 0.05 to 1% by weight of sodium hypochlorite or hypochlorous acid as initial components. Potassium, 0.001-1 wt% copolymer of acrylic and methacrylic acid, 0.005-1 wt% copper corrosion inhibitor (preferably BTA), 0-0.01 wt% polymethyl vinyl ether (PMVE) ), Providing a chemical mechanical polishing slurry composition having a pH of 8 to 12 containing 0 to 0.1 wt% nonionic surfactant, and 0 between the chemical mechanical polishing pad and the substrate. Creating dynamic contact with a down force of .69-34.5 kPa and dispensing a chemical mechanical polishing slurry composition in the vicinity of the chemical mechanical polishing pad-substrate interface. [Selection figure] None |