http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016028451-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G19-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 |
| filingDate | 2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98295de6b47ce1f5b1605a7ecf9af06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb363e0baf3f4f6464b9bcafabd050ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2016-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016028451-A |
| titleOfInvention | Oxide semiconductor film |
| abstract | A material suitable for semiconductor use such as a transistor and a diode is provided. In addition, a semiconductor device capable of mass production of a highly reliable semiconductor device using a large substrate such as mother glass is provided. In addition, a semiconductor device including a transistor in which an electronic state of an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable is provided. In addition, a transistor using an oxide semiconductor film for a channel is provided with stable electrical characteristics, and a highly reliable semiconductor device is manufactured. A semiconductor device using an oxide material which has c-axis orientation and has a triangular or hexagonal atomic arrangement as viewed from the surface or interface direction and includes a crystal rotated about the c-axis. [Selection] Figure 1 |
| priorityDate | 2010-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.