http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016023117-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2014-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01dc0b3180e64cd8595cab751649b269 |
| publicationDate | 2016-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2016023117-A |
| titleOfInvention | Cubic silicon carbide semiconductor substrate and method for manufacturing cubic silicon carbide semiconductor substrate |
| abstract | A cubic silicon carbide semiconductor substrate and a method for manufacturing a cubic silicon carbide semiconductor substrate capable of efficiently reducing crystal defects and obtaining a high-quality epitaxial film with few crystal defects are provided. A cubic silicon carbide semiconductor substrate according to the present invention includes a silicon substrate, a first silicon carbide film formed on the surface of the silicon substrate, and a mask having an opening formed on the surface of the first silicon carbide film. And a second silicon carbide film covering the mask material and the silicon carbide film, and the mask material is inclined at a predetermined inclination angle θ with respect to one direction in a plan view of the first silicon carbide film. It is characterized by. [Selection] Figure 3 |
| priorityDate | 2014-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.