| abstract |
In a semiconductor device in which two substrates are bonded to each other, the flatness of the metal surface is improved at the joint portion between the outermost metal layers, the joint area is increased, the contact resistance is reduced, and the metal layers are joined together. Improve reliability. A first substrate includes an insulating film formed thereon, a wiring formed in the insulating film, a top surface exposed on the top surface of the insulating film, and a bottom surface connected to the wiring. And a connection metal formed on the upper surface of the connection electrode. The connection metal is disposed in a recess formed on the upper surface of the connection electrode, and the upper surface of the insulating film, the upper surface of the connection electrode, and the upper surface of the first connection metal are planarized. The second substrate also has the same configuration as the first substrate. The first substrate and the second substrate are bonded so that the connecting metal faces each other and the insulating film faces each other. [Selection] Figure 1 |