http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015506396-A
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-0883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-7731 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-77348 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-64 |
filingDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2015-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2015506396-A |
titleOfInvention | Nitride phosphors with interstitial cations for charge equilibrium |
abstract | Chemical formula, M (x / v) (M ′ a M ″ b ) Si (c−x) Al x N d : RE (where M is a divalent or trivalent metal having a valence v) , M ′ is at least one divalent metal, M ″ is at least one trivalent metal, 2a + 3b + 4c = 3d, and RE is Eu, Ce, Pr, Nd, Sm, Gd, Tb, A phosphor containing a nitride-based composition represented by (at least one element selected from the group consisting of Dy, Ho, Er, Tm, and Yb). Further, the nitride-based composition may have a general crystal structure of M ′ a M ″ b Si c N d , where Si is substituted with Al in the crystal structure, and M is , Located substantially at the interstitial site within the crystal structure. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015529707-A |
priorityDate | 2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.