http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015502031-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2012-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015502031-A |
| titleOfInvention | Memristors based on mixed metal oxides |
| abstract | The present invention relates to micro-sized and nano-sized electronic devices based on unconventional materials. Memristor devices with stable and reproducible characteristics in accordance with the present invention can be used in computer systems based on the analog architecture of artificial neural networks. The device consists of an active layer located between two conductive layers in electrical contact, wherein the active layer is an ABO x type oxide, where component B is titanium, zirconium or hafnium. And component A is a trivalent metal having an ionic radius equal to 0.7 to 1.2 times the ionic radius of titanium, zirconium or hafnium. If component B is titanium then component A is selected from aluminum or scandium; if component B is zirconium or hafnium, then component A is selected from scandium, yttrium or ruthenium. The technical result of the proposed invention is an increase in stability and reproducibility of operating overvoltage and resistance values in low and high impedance states. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276820-B2 |
| priorityDate | 2011-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.