http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015230945-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_493254ad6a978e23f37dfb872b1bbee8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11276cd7b630770ff1eab498eaf58569 |
| publicationDate | 2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015230945-A |
| titleOfInvention | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
| abstract | PROBLEM TO BE SOLVED: To form a film having a high carbon concentration. A raw material having a chemical bond between a first element and carbon is thermally decomposed with respect to a substrate, and at least a part of the chemical bond between the first element and carbon contained in the raw material is cut. A first solid layer having a thickness of more than one atomic layer and several atomic layers or less and containing a chemical bond between the first element and carbon is formed by supplying the raw material under the condition that the first element is maintained. And supplying a reactant containing a plasma-excited second element or supplying a plasma-excited inert gas and a non-plasma-excited second element to the substrate. Thus, the first element and the second element are formed on the substrate by performing a predetermined number of cycles of non-simultaneously performing the step of modifying the first solid layer and forming the second solid layer. And a film containing carbon. [Selection] Figure 4 |
| priorityDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 84.