| abstract |
A crystalline laminated structure having excellent semiconductor characteristics, in particular, excellent controllability of conductivity, longitudinal conduction, and good electrical characteristics is provided. A stacked structure including a semiconductor layer containing a crystalline oxide semiconductor as a main component directly or via another layer on a metal layer containing a uniaxially oriented metal as a main component. The crystalline oxide semiconductor is an oxide semiconductor containing one or more metals selected from gallium, indium, and aluminum, and is uniaxially oriented. [Selection figure] None |