| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47d4d79debde953afe2bc27b1c16c037 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49005 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B8-4444
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B06B1-0292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G10K11-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B8-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B8-00 |
| filingDate |
2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cab0c28daf73aa393dba21afb21a065c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04d27b057159b2c99dfe63f79e1af432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab324757b0bb9107f50601bd78c2a2b4 |
| publicationDate |
2015-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015221214-A |
| titleOfInvention |
Ultrasonic probe |
| abstract |
Even if the acoustic impedance of a backing layer is matched to a semiconductor substrate of a CMUT cell, the effect of suppressing multiple reflections differs depending on the thickness of the semiconductor substrate. An ultrasonic probe capable of suppressing multiple reflections against this phenomenon is also provided. An ultrasonic probe comprising a semiconductor substrate having a plurality of CMUT cells formed on the surface thereof, an acoustic lens provided on the surface side of the CMUT cells, and a backing layer provided on the back side of the semiconductor substrate. In the child, the backing layer 5 is formed of a first backing layer 27 in contact with the semiconductor substrate and a second backing layer 29 provided on the back side of the backing layer 27, and the backing layer 27 has a thickness of the semiconductor substrate 1. The backing layer 29 is formed of an attenuation material capable of attenuating the ultrasonic wave transmitted through the backing layer 27. The acoustic impedance is set according to the acoustic impedance of the backing layer 27, and the reflection echo Suppresses multiple reflections. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022138175-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11707257-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7239467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019208118-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019528972-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4059621-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019193151-A |
| priorityDate |
2011-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |