| abstract |
A method for doping a substrate at ambient conditions without high vacuum, oxide capping layer or oxidation step. A coating of a composition comprising a polymer, a dopant precursor and a solvent is disposed on the substrate, the polymer is phase separated while in solution, and the dopant precursor can be embedded, Annealing at a temperature of 750-1300 ° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. The semiconductor substrate also includes embedded dopant domains with a diameter of 3 to 30 nanometers, the domains include Group 13 or Group 15 atoms, and the embedded spherical domains are within 30 nanometers from the surface of the substrate. Located in. [Selection] Figure 1 |