| abstract |
A semiconductor device having a transistor with excellent electrical characteristics (eg, on-state current, field-effect mobility, frequency characteristics, etc.) is provided. Alternatively, a semiconductor device including a highly reliable transistor is provided. A channel-etched transistor in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode, the first gate electrode and the second gate electrode in a channel width direction of the transistor. The second gate electrode is connected to the opening provided in the first gate insulating film and the second gate insulating film, and the oxide semiconductor film is interposed through the first gate insulating film and the second gate insulating film. It has a surrounding structure. Further, the channel length of the transistor is 0.5 μm or more and 6.5 μm or less. [Selection] Figure 1 |