Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1721d75f5bf603447ec5a26b5c1c0be0 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-40 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-354 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-707 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate |
2015-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11bdc6e8ee698bb1aa0d44f1b2d4193c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af742361bdaa2699a776cc505234560c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c192117fdd6a6f871c282a4d88c30dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecd3e8f781af13c31440306da3e2418c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_838de8b5d2d27c03e74464c6d79c9104 |
publicationDate |
2015-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2015188110-A |
titleOfInvention |
System and method for partial dissolution membrane treatment with non-periodic pulses |
abstract |
A thin film processing technique is provided. In one aspect, the present disclosure relates to a thin film processing method. The method irradiates a first region of the thin film with a first laser pulse and a second laser pulse while advancing the thin film in a first selected direction, each laser pulse providing a shaped beam and partially illuminating the thin film. The first region re-solidifies and crystallizes to form a first crystallized region. The method further irradiates the second region of the thin film with a third laser pulse and a fourth laser pulse, each laser pulse providing a forming beam, having a sufficient fluence to partially dissolve the thin film, The two regions resolidify and crystallize to form a second crystallized region. The time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. [Selection] Figure 3A |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020537357-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7335236-B2 |
priorityDate |
2009-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |