http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015175799-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9bceffddb90b9b3da8a772212961764b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7087502212ad225e215b2a61bcbad33e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0eaa1103396827fb372daa810dd54d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b702c4647e8f31599c36e8927819e00d |
| publicationDate | 2015-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015175799-A |
| titleOfInvention | Semiconductor device evaluation method and semiconductor device evaluation apparatus |
| abstract | A semiconductor device evaluation method and a semiconductor device evaluation device capable of accurately measuring a threshold voltage at turn-on are provided. A drain of a MOSFET, which is a device under test, is connected to a constant current source, and a source and a body are grounded. The constant voltage source 2 continues to apply a constant stress voltage Vg equal to or higher than the threshold voltage Vth of the MOSFET 1 to the gate of the MOSFET 1 at all times. The constant current source 3 supplies a source-drain current Isd between the source and drain of the MOSFET 1 and measures the source-drain voltage Vsd applied to the MOSFET 1 when the stress voltage Vg is applied to the MOSFET 1. And keep monitoring. The fluctuation amount ΔVth of the threshold voltage Vth of the MOSFET 1 can be obtained by converting the fluctuation amount of the source-drain voltage Vsd of the MOSFET 1 measured by the constant current source 3 into the fluctuation amount ΔVth of the threshold voltage Vth of the MOSFET 1. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016216005-B4 |
| priorityDate | 2014-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.