http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015170824-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate | 2014-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c93cdcd6bc5718013f6e3098f2b56174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb3a56c7cabc7451ec0a7d986b4c979 |
| publicationDate | 2015-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015170824-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A semiconductor device with good electrical characteristics and a method for manufacturing the same are provided. According to an embodiment, a semiconductor device including a first semiconductor layer and a first electrode is provided. The first semiconductor layer includes a nitride semiconductor including a first metal. The first electrode includes a first region, a second region, and a third region. The first region includes a compound of the first metal and a second metal having reducibility with respect to the first semiconductor layer, or an alloy of the first metal and the second metal. The second region is provided between the first semiconductor layer and the first region, and includes the first metal and the second metal. The third region includes a compound of the first metal and nitrogen, and is provided between the first semiconductor layer and the second region. The first electrode is provided in contact with the first semiconductor layer. [Selection] Figure 1 |
| priorityDate | 2014-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.