| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2014-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_881a80009d01d6e88b3952fd5db31a52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_537ee292a59c5ba6f3651451048627d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ef58a1bb9ec60924e5ac12d9a312802 |
| publicationDate |
2015-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015162654-A |
| titleOfInvention |
Etching solution, etching method using the same, and method for manufacturing semiconductor substrate product |
| abstract |
An etching solution capable of selectively removing a layer containing a specific metal while suppressing damage to a silicide layer (particularly a layer containing germanium silicide), an etching method using the same, and an etching method using the same A method for manufacturing a semiconductor substrate product is provided. An etching solution for a semiconductor process, which contains fluorine ions and an acid having a pKa of 2 or less. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021166571-A1 |
| priorityDate |
2014-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |