| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c233f7f62730bf83b40c415fb4cb724 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2015-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ed1b64fcd4edb9eaadb9620cadbd24b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b8d2b0cff853b9d4ffe465c4f995f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d1e26eaa03cd6ef35e763ed5e634682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_750f1f6579ed747f447fefe4f13151f2 |
| publicationDate |
2015-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015154078-A |
| titleOfInvention |
Method for manufacturing gate insulating layer |
| abstract |
The present invention provides a method for manufacturing a gate insulating layer that achieves both the stability of TFT (Thin Film Transistor) and the antistatic performance. Using a chemical vapor deposition method, a silicon nitride layer and a silicon oxide layer are sequentially deposited on a Cu gate to obtain a gate insulating layer in which the silicon nitride layer and the silicon oxide layer are sequentially stacked. Process. The silicon nitride layer effectively blocks oxygen to prevent Cu gate oxidation, and the silicon oxide layer effectively blocks hydrogen to prevent reduction of the active semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923575-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10468491-B1 |
| priorityDate |
2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |