abstract |
A method for fabricating a gallium and nitrogen containing laser diode device is provided. An n-GaN and n-side cladding layer, an active region, a p-GaN and p-side cladding, an insulating layer, and a contact / pad layer are listed. Further, a sacrificial region 107 and a bonding material 108 are used during the die enlargement process. [Selection] Figure 2 |