| abstract |
[PROBLEMS] To reduce the influence of the resist film from the environment and efficiently block OOB light, reduce the resist pattern film thickness, reduce the bridge between patterns, and increase the sensitivity of the resist. Provided is a pattern forming method in which a negative pattern is formed by development with an organic solvent using a resist protective film having an effect of suppressing generation of outgas. Resist protection based on a polymer compound having a repeating unit of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group on a photoresist film formed on a substrate The method includes a step of forming a film, a step of performing EUV exposure with an electron beam or a wavelength of 3 nm to 15 nm, and a step of forming a negative pattern by developing an organic solvent developer. [Selection figure] None |