http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015149396-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9a255559e1d94f20510a17a673b1078 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-319 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2014-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2853d9f298509b3366ed61ab7d7f09bf |
| publicationDate | 2015-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015149396-A |
| titleOfInvention | Method for forming ferroelectric film, electronic device, and electronic device |
| abstract | Disclosed is a method for forming a thick ferroelectric film having good crystal orientation. [Solution] A method of forming a ferroelectric film formed on an orientation control layer using a chemical solution deposition method, Performing the first step of forming the amorphous film a predetermined number of times and then performing the second step of crystallizing the amorphous film once to form the oxide crystal layer; Forming a ferroelectric film in which a plurality of the oxide crystal layers are stacked on the orientation control layer by repeating the film formation step of the oxide crystal layer a plurality of times. A method of forming a ferroelectric film, characterized in that the thickness is reduced as the oxide crystal layer becomes an upper layer. [Selection] Figure 4 |
| priorityDate | 2014-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.