http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015149346-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7033556a430b6c2e985afb28bd47dc1d |
| publicationDate | 2015-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015149346-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
| abstract | A semiconductor device manufacturing method and a semiconductor device in which a defect level does not decrease even at a high temperature are provided. A first epitaxial growth film layer is formed on a surface of a silicon substrate, and a second epitaxial growth film layer serving as a region where the density of a specific metal element is high and the recombination lifetime of carriers is shortened on the surface. 3 are stacked. When a metal element is epitaxially grown, a material gas containing an organic metal gas containing a predetermined metal element is thermally decomposed on the surface of the silicon substrate 1 so that the metal element is taken into the epitaxially grown film. become. The metal element is replaced with silicon atoms by heat in the epitaxially grown film, and a carrier recombination level unique to the metal element is formed in the second epitaxial growth film layer 3. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017085047-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11522058-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7090530-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107430993-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107430993-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020087954-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019003969-A |
| priorityDate | 2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.